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Many patent technologies are used for HAIMOSIC products. We are constantly working on R&D to realize low inductance package in the world's top level.

3rd GENERATION HAIMOSIC SMART POWER MODULE

The HAIMOSIC third-generation power module is very compact due to its built-in coreless current sensors.As a bolt-fastening type 6-in-1 power module, it achieves worldclass performance (low inductance). HAIMOSIC's power modules use proprietary patented technology that not only minimizes the inductance of the module itself but also incorporates a technique that partially cancels the total inductance of the inverter when the power module is assembled into it.HAIMOSIC's power module can accommodate S size/M size/L size SiC chips within a single package. By changing the configuration of the chips inside the module according to customer needs, a finely selectable current range of 330Arms to 650Arms (1200V) and 560Arms to 680Arms (750V) is available.

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4th GENERATION HAIMOSIC SMART POWER MODULE

The fourth generation power module inherits the core technology of the third generation while adopting EPOXY molding and copper CLIP technology, improving the power cycle lifespan. Additionally, by using laser welding for terminal connections, it can reduce inductance compared to the third generation. Many technologies have been implemented to maximize the performance of ROHM's fifth generation chips. The module design is intended to allow switching to SiC chips up to the seventh generation inside the module. By updating the generation of SiC chips, it is possible to enhance the performance of the inverter. 

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5th GENERATION ROHM SiC

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Advantages

  • Automotive grade power module

    HAIMOSIC is specialized in the development of vehicle specification level power module. Compared to general industrial power modules, multiple difficulties such as vibration, cooling, miniaturization and EMC are required to be solved. Although HAIMOSIC design and manufacture power modules, we also hold engineers who can design inverter for automobiles. Since we can design SiC drive circuits, we can provide design advise to the customers.

  • ROHM SiC

    HAIMOSIC is capable of developing optimal packaging for ROHM SiC chips. Due to the deep understanding of ROHM SiC chip, the performance and the reliability of the chip installed in the module can be maximized.

  • Quality Control

    HAIMOSIC closely integrates the two aspects of Quality Control at “The design stage" and “The production stage", to aim for world-class quality control of the product.

HAIMOSIC (SHANGHAI) CO.,LTD.

HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360000 / year. The total investment of the project is 401million RMB and the registered capital is 250million RMB.

  • Date of Establishment

    July, 2021

  • Business Description

    Development, design, production, sales of power modules

  • Investment Ratio

    Zhenghai Sicron(100% subsidiary of Zhenghai Group)80%,ROHM 20%

HAIMOSIC (SHANGHAI) CO.,LTD.

Zhenghai Group

Founded in 1990, Zhenghai Group is a key enterprise group in Shandong Province. Starting with shadow mask manufacturing in the early days of the company's founding, Zhenghai Group has diversified their business centered on manufacturing, stepping into many industries such as rare earth permanent magnets, regenerative medicine, automobile interiors, and electronic information. The group has more than a dozen subsidiaries.

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ROHM

ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. ROHM’s strengths in the power and analog markets allows them to propose optimized solutions for entire systems that combine peripheral components (i.e. transistors, diodes, resistors) with the latest SiC power devices as well as driver ICs that maximize their performance.

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